Hynix HMT32GR7AER4C-GD 16GB DDR3 R DIMM

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Hynix Announces 8GB And 16GB 2-rank DIMM Modules Using MetaRAM's DDR3 Technology
August 19, 2008

Origin Of News Release: San Francisco, CA
Original Release Date: August 19, 2008
Announcement: Hynix Announces new 8GB and 16GB 2-rank DIMM modules for servers and workstations
Availability: Between late 2008 and second half of 2009

Hynix Demonstrates World's First 16 GB 2-Rank R-DIMM
Using MetaRAM Technology

Hynix Semiconductor, Inc. today announced that it is using MetaRAM's new DDR3 technology in its next generation R-DIMMs, including the world's first 16GB 2-rank DIMM (HMT32GR7AER4C-GD), which it will demonstrate at the Intel Developer Forum (IDF) in San Francisco (August 19th - 21st). Hynix's new 16GB and 8GB (HMT31GR7AER4C-GC) 2-rank DIMMs can triple DDR3 memory capacity in servers and workstations, enabling the world's highest memory capacity per channel without degrading performance.

Intel will demonstrate the world's first 16GB 2-rank DIMM from Hynix, using the MetaRAM DDR3 chipset, at IDF. Intel will also demonstrate a server with 160GB using Hynix DDR3 R-DIMMs and Meta SDRAM technology in the Advanced Technology Zone.

DDR3 MetaRAM is similar to the previous generation DDR2 technology in that it enables significantly more memory in a server. An added benefit of the DDR3 MetaRAM technology is that it enables larger memory capacity without negatively impacting the operating frequency of the DDR3 memory channel. It is the only technology that has been demonstrated to run 24GB of DDR3 SDRAM in a channel at 1066 million transactions per-second (MT/s). Using 3 16GB DIMMs, users can achieve 48GB per channel running at 1066 MT/s, while other competing solutions max out at 16GB per channel at 1066MT/s.

As with its earlier DDR2 technology, the DDR3 MetaRAM technology enables Hynix to introduce cost-effective, high capacity R-DIMMs by using mainstream 1 gigabit (Gb) DRAMs.

"As a leader in DRAM technology, Hynix is pleased to be working with MetaRAM and Intel to successfully develop the world's first 16GB DDR3 module," said Mr. J.B. Kim, Senior Vice President of Marketing at Hynix Semiconductor. "With this product introduction we expect to see growth in high performance, high density applications."

"Hynix has always been at the leading edge of memory innovation and it immediately understood how our new DDR3 MetaRAM technology could improve customers' overall compute performance by increasing the memory capacity and frequency," said Fred Weber, the CEO of MetaRAM. "We've seen good market traction with our DDR2 MetaRAM chipset. We believe that the adoption into Intel-based servers and workstations as well as the memory bandwidth benefits of DDR3 MetaRAM will garner even more momentum for our chipsets and technology."

More information on Hynix Semiconductor Inc. and its new R-DIMM technology can be found on its web site at http://www.hynix.com.

About Hynix Semiconductor Inc.

Hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world's top tier memory semiconductor supplier offering Dynamic Random Access Memory chips ("DRAMs") and Flash memory chips to a wide range of established international customers. The Company's shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about Hynix is available at http://www.hynix.com.


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